BaDElPh Highlights
- BaDElPh Highlights
- Anomalies at the DP in graphene
- CDW & Kondo effect in a Dirac semimetal
- QWS on bilayer graphene
- Flat band in graphene
- Antiferromagnetic TI
- MoS2 on Gr/Ir(111)
- EAL of low-energy electrons in solids
- SC in few-monolayer MgB2
- SOC induced gap in graphene
- Li-doped black phosphorous
- Rashba coupling amplification in BaNiS2
- High-quality graphene
- EPC and SC in graphene
- Surface-enhanced CDW in UD Bi(2201)
- Origin of electron accumulation in In2O3
- Impurity state in H-Graphene
- Gap and orbital character in Ba(FeCo)2As2
- Surface-umklapp at an organic-metal interface
- Quasiparticles at the Mott transition in V2O3
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Rashba coupling amplification by a staggered crystal field
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We have investigated the giant Rashba-Dresselhaus spin-splitting of the electronic band structure of the centrosymmetric bulk BaNiS2 crystal by means of angle-resolved photoemission spectroscopy (ARPES) supported by ab initio calculations. The system is composed by light elements so the spin-orbit coupling could not account for the measured remarkable band splitting of ΔE ≈ 150 meV. This is explained by a huge staggered crystal field of 1.4 V/Å, produced by a gliding plane symmetry, that breaks inversion symmetry at the Ni site. This unexpected result in the absence of heavy elements demonstrates an effective mechanism of Rashba coupling |
amplification that may foster spin-orbit band engineering. Retrieve article Rashba coupling amplification by a staggered crystal field D. Santos-Cottin, M. Casula, G. Lantz, Y. Klein, L. Petaccia, P. Le Fèvre, F. Bertran, E. Papalazarou, M. Marsi, A. Gauzzi, Nat. Commun. 7, 11258 (2016). doi: 10.1038/ncomms11258 This paper was selected as an Elettra Top Story. |
Last Updated on Monday, 24 July 2023 17:55