Electronic Properties of patterned PEDOT:PSS
A new water-vapour-assisted nanoimprint lithography (NIL) process for the patterning and electronic property control of a conductive polymer (PEDOT:PSS) has been developed. This type of polymer is widely used for a variety of organic based opto-electronics. Nano structuration of the PEDOT:PSS layer is of key importance for device miniaturization and performance. NIL process is a strong candidate for low cost high throughput technique for PEDOT:PSS nano structuration. Specifically the process was optimized with respect to relative humidity, applied pressure and temperature (RH, P, T).
A.Radivo et al. RSC Adv., 2014,4, 34014-34025
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NIL process is a strong candidate for low cost high throughput technique for PEDOT:PSS nano structuration but with traditional NIL process results with limited aspect ratios were obtained (Max 0,86 AR for sub-100nm resolution). The process here presented was optimized with respect to relative humidity, applied pressure and temperature (RH, P, T). The control of environmental humidity was found to be crucial. ![]() High quality nanostructures were reproducibly obtained at high relative humidity values (RH >75%), with sub-100 nm resolution features attaining aspect ratios (AR) as high as ~6 at ~95% RH. The developed process of water-vapour-assisted NIL (WVA-NIL) strongly affects the electronic properties of PEDOT:PSS. |
By current-voltage measurements and ultraviolet photoemission spectroscopy we demonstrate that the process parameters p, T and RH are correlated with changes of PEDOT:PSS conductivity, work function and states of the valence band. In particular, an increase in the films conductivity by factors as high as 105 and a large decrease in the work function, up to 1.5 eV, upon WVA-NIL processing were observed. Moreover, it was found that workfunction shift can be reversed by a short oxygen plasma treatment, without altering significantly the layer's nano structure or conductivity. Employing the produced PEDOT:PSS nanostructured layers as anode buffer layer in P3HT:ICBA bulk heterojunction solar cells, a significant performance increase was obtained (60% relative increase of efficiency respect to a not patterned reference cell). Retrieve article Patterning PEDOT:PSS and tailoring its electronic properties by water-vapour-assisted nanoimprint lithography
Andrea Radivo, Enrico Sovernigo, Marco Caputo, Simone Dal Zilio, Tsegaye Endale, Alessandro Pozzato, Andrea Goldonid and Massimo Tormen
RSC Adv., 2014,4, 34014-34025 DOI: 10.1039/C4RA04807E Received 21 May 2014, Accepted 23 Jul 2014 First published online 23 Jul 2014 |
Last Updated on Monday, 29 September 2014 14:50