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Specifications
Beamline: insertion device
source: |
one 3-section undulator 12.506 cm period |
polarisation: |
horizontal |
energy range: |
16-1000 eV |
number of periods |
36 |
Deflection parameter K |
< 5.3 |
Source size (sigma) |
243 x 56 mm2 (H x V) at 100 eV |
Source divergence (sigma) |
74 x 70 mrad2 (H x V) at 100 eV |
|
Beamline: monocromator
type: |
spherical grating monochromator |
number of gratings: |
5 |
pre-focussing mirrors: |
2 spherical |
refocussing mirror |
toroidal |
energy Range |
20-750 eV |
resolving power: |
20 000 @ 65 eV,
15 000 @ 400 eV |
|
Read more...
Preparation chamber
base pressure |
low 10-10 mbar |
manipulator's degrees of freedom |
5 |
temperatures |
100-160 to 400K (to 2500K in a separated heating station) |
-
“in situ” UHV samples preparation
-
Low energy electron diffraction
-
Ion sputtering
-
Annealing
-
Gas lines
-
Metal beam epitaxy
-
Microbalance
Heating station
-
High temperature (2500K) annealing
-
CVD (chemical vapor deposition) up to 10-3 mbar
-
Magnetizing coil
Read more...
|
Main chamber
base pressure |
10-11 mbar |
manipulator's degrees of freedom |
5 (motorized azimuthal angle motion) |
temperatures |
9 - 450K on vertical manipulator |
Scienta R4000 Analyzer
-
30 degrees angle range (670 channels in parallel acquisition)
-
Angle resolution from 0.1°
-
Energy resolution from 1 to 10 meV
Read more...
|
Last Updated on Friday, 02 October 2015 15:14