Single-oriented domains of h-BN on Ir(111)
Using X-ray Photoelectron Diffraction (XPD) we show that, on the Ir(111) surface, ordinary high-temperature borazine deposition gives rise to an h-BN monolayer formed by fcc and hcp antiparallel domains, while h-BN monolayer with single fcc orientation can be synthesized by dosing borazine at room temperature followed by annealing.
F. Orlando et al., ACS Nano 8, 12063 (2014).
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The nucleation of rotated phases, giving rise to grain boundaries and other defects, renders the growth of large, single-crystalline h-BN domains still a challenging task. In this study we successfully investigated a CVD method for growing a h-BN monolayer with single orientation on Ir(111) by proper tuning of the synthesis parameters. Using X-ray photoelectron diffraction we demonstrated that a fcc single-domain h-BN monolayer can be synthesized by cyclic dose of borazine onto the metal substrate at room temperature followed by annealing. |
oriented fcc and hcp domains. Our results provide new insight into the strategies for producing high-quality h-BN monolayers on transition metal surfaces. Retrieve articleEpitaxial Growth of a Single-Domain Hexagonal Boron Nitride Monolayer; Fabrizio Orlando, Paolo Lacovig, Luca Omiciuolo, Nicoleta G. Apostol, Rosanna Larciprete, Alessandro Baraldi, and Silvano Lizzit; ACS Nano 8, 12063-12070 (2014). 10.1021/nn5058968 |
